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参数资料
| 型号： | W3H32M72E-533SB2C |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.65 ns, PBGA208 |
| 封装： | 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 1/30页 |
| 文件大小： | 0K |
| 代理商： | W3H32M72E-533SB2C |
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W3H32M72E-XSB2X
Preliminary
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
November 2009
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 20mm
1.0mm pitch
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Four internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Single 1.8V ±0.1V supply
Programmable CAS latency: 3, 4, 5, or 6
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 32M x 72
Weight: W3H32M72E-XSB2X - 2.5 grams typical
BENEFITS
69% space savings vs. FPBGA
Reduced part count
54% I/O reduction vs FPBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradable to 64M x 72 density (contact factory for
information)
* This product is under development, is not qualied or characterized and is subject
to change without notice.
Area
5 x 209mm2 = 1,045mm2
320mm2
69%
5 x 90 balls = 450 balls
208 Balls
54%
S
A
V
I
N
G
S
I/O
Count
Actual Size
W3H32M72E-XSB2X
CSP Approach (mm)
90
FBGA
11.0
19.0
20
16
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
FIGURE 1 – DENSITY COMPARISONS
White Electronic Designs
W3H32M72E-XSB2X
相关PDF资料 |
PDF描述 |
|---|---|
| W3H32M72E-400SB2M | 32M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3HG2128M72AER403AD6SG | 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| W3HG2128M72AER534AD6MG | 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| W3HG2128M72AER665AD6SG | 256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 |
| W3HG2128M72AER534AD6SG | 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H32M72E-533SB2I | 制造商:Microsemi Corporation 功能描述:MICROCIRCUIT, DIGITAL, DDR2SDRAM, 2GB - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H32M72E-533SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H32M72E-533SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H32M72E-533SBM | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
| W3H32M72E-667ES | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
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