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参数资料
| 型号： | W3H64M64E-400SBC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 26/32页 |
| 文件大小： | 928K |
| 代理商： | W3H64M64E-400SBC |
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W3H64M64E-XSBX
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2009
Rev. 4
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Revision History Continued
Rev #
History
Release Date
Status
Rev 4
Changes (Pg. 1, 2, 3, 5, 6, 16, 22, 23, 24, 25)
4.1 Change Figure 1 to correct density and I/O count
4.2 Remove WEB#, RASB#, CASB#, CSB#, add conncetion
point o DKE on H2 and DU3
4.3 Remove all reference to pinout on U4, not available in
64M64E part
4.4 VCCQ is common to VCC in ball description (Table 1)
4.5 Table 3 - Singel bank precharge change x to BA in coumn
BA0, BA1m BA2 abd bank activate, change WE# for "L" to
"H".
4.6 Tables 5 - DC operating conditions; remove I/O supply
voltage for VCCQ
4.7 Table 6 - Remove VCCQ; VCCQ is common to VCC and
remove reference to TCASE
4.8 BGA thermal resistance: add new note - TO obtain the
junction the inc., multiply the thermal resistance by the
poer dissipated in each die in the MCP
4.9 Table 11 - Corrected ICC specs and condtions
4.10 AC timing parameters - Correct CL4 to CL5 abd CK3 to
CK4, change min for CL5 to 3,750. Remove Cl6, Cl5 and
CL4 from columns with speeds
4.11 AC timing parameter continued - correct timings for CL6
column
4.12 Package dimensions - width = 16.15 (0.636) MAX
4.13 Correct Mbs to Mb/s in ordering information
March 2009
Advanced
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PDF描述 |
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| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W3H64M72E-ESM | 64M X 72 DDR DRAM, PBGA208 |
| W3H64M72E-SBC | 64M X 72 DDR DRAM, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-533SBI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H64M64E-533SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
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