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| 型号： | W3H64M72E-533ESM |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| 封装： | 17 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 1/30页 |
| 文件大小： | 999K |
| 代理商： | W3H64M72E-533ESM |
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W3H64M72E-XSBX
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
December 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667*, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 17 x 23mm
1.0mm pitch
DDR2 Data Rate = 667*, 533, 400
Core Supply Voltage = 1.8V ± 0.1V
I/O Supply Voltage = 1.8V ± 0.1V - (SSTL_18
compatible)
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 3, 4 or 5
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 64M x 72
Weight: W3H64M72E-XSBX - 2.5 grams typical
BENEFITS
63% SPACE SAVINGS vs. FPBGA
Reduced part count
55% I/O reduction vs FPBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradable to 128M x 72 density (contact factory
for information)
* This product is under development, is not qualied or characterized and is subject
to change or cancellation without notice.
Area
5 x 209mm2 = 1,045mm2
391mm2
63%
5 x 92 balls = 460 balls
208 Balls
55%
S
A
V
I
N
G
S
I/O
Count
Actual Size
W3H64M72E-XSBX
CSP Approach (mm)
90
FBGA
11.0
19.0
23
17
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
FIGURE 1 – DENSITY COMPARISONS
White Electronic Designs
W3H64M72E-XSBX
相关PDF资料 |
PDF描述 |
|---|---|
| WPS256K16T-20LJI | 256K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| WMF256K8-70FEI5 | 256K X 8 FLASH 5V PROM, 70 ns, CDFP32 |
| WMF256K8-70DEC5A | 256K X 8 FLASH 5V PROM, 70 ns, CDSO32 |
| WMF256K8-90DEM5 | 256K X 8 FLASH 5V PROM, 90 ns, CDSO32 |
| WMS512K8BV-17CME | 512K X 8 STANDARD SRAM, 17 ns, CDIP32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H64M72E-533SB | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M72E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M72E-533SBI | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M72E-533SBM | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
| W3H64M72E-667ES | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
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