参数资料
型号: W3HG2128M64EEU403D6IGG
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 256M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
封装: ROHS COMPLIANT, DIMM-240
文件页数: 6/11页
文件大小: 170K
代理商: W3HG2128M64EEU403D6IGG
W3HG2128M64EEU-D6
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2007
Rev. 1
DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply Voltage
VCC
1.7
1.8
1.9
V
3
I/O Reference Voltage
VREF
0.49 x VCC
0.50 x VCC
0.51 x VCC
V1
I/O Termination Voltage
VTT
VREF-0.04
VREF
VREF+0.04
V
2
SPD Supply Voltage
VCCSPD
1.7
-
3.6
V
Notes:
1
VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-1 percent of the
DC value. Peak-to-peak AC noise on VREF may not exceed +/-2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
3. VCCQ of all IC's are tied to VCC.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Units
VCC
Voltage on VCC pin relative to VSS
-0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage Temperature
-55
100
°C
TCASE
Device Operating Temperature
0
85
°C
IL
Input leakage current; Any input 0V<VIN<VCC; VREF input
0V,VIN,0.95V; Other pins not under test = 0V
Command/Address,
RAS#, CAS#, WE#,
-80
80
μA
CS#, CKE
-40
40
μA
CK, CK#
-30
30
μA
DM
-10
10
μA
IOZ
Output leakage current; 0V<VIN<VCC; DQs and ODT are disable
DQ, DQS, DQS#
-10
10
μA
IVREF
VREF leakage current; VREF = Valid VREF level
-32
32
μA
相关PDF资料
PDF描述
W3HG2128M64EEU534XD4IMG 256M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
W3HG2128M64EEU665XD4SG 256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200
W3HG2128M64EEU665XD4ISG 256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
W3HG2128M64EEU806XD4SG 256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200
W3HG2128M64EEU403XD4MG SYNCHRONOUS DRAM MODULE, DMA200
相关代理商/技术参数
参数描述
W3HG2128M72ACER403AD6XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP
W3HG2128M72ACER534AD6XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP
W3HG2128M72ACER665AD6XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP
W3HG2128M72ACER806AD6XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP
W3HG2128M72ACER-AD6 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP