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参数资料
| 型号： | W49F002U-70 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 |
| 封装： | PLASTIC, DIP-32 |
| 文件页数： | 4/23页 |
| 文件大小： | 303K |
| 代理商： | W49F002U-70 |
W49F002U
- 12 -
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to Vss Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°C
Storage Temperature
-65 to +150
°C
D.C. Voltage on Any Pin to Ground Potential except OE
-0.5 to VDD +1.0
V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
Voltage on OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(VDD = 5.0V
±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP.
MAX.
Power Supply
Current
ICC
CE=OE= VIL, WE= VIH, all DQs open
Address inputs = VIL/VIH, at f = 5 MHz
-
25
50
mA
Standby VDD
Current (TTL input)
ISB1
CE = VIH, all DQs open
Other inputs = VIL/VIH
-
2
3
mA
Standby VDD
Current
(CMOS input)
ISB2
CE = VDD -0.3V, all DQs open
Other inputs = VDD -0.3V/GND
-
20
100
A
Input Leakage
Current
ILI
VIN = GND to VDD
-
10
A
Output Leakage
Current
ILO
VOUT = GND to VDD
-
10
A
Input Low Voltage
VIL
-
-0.3
-
0.8
V
Input High Voltage
VIH
-
2.0
-
VDD +0.5
V
Output Low Voltage
VOL
IOL = 2.1 mA
-
0.45
V
Output High Voltage
VOH
IOH = -0.4 mA
2.4
-
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W49F002U-70B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002U-90B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UP12B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UP70B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UP90B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
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