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参数资料
| 型号： | W49F002UT90 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| 封装： | 8 X 20 MM, TSOP-32 |
| 文件页数： | 6/23页 |
| 文件大小： | 303K |
| 代理商： | W49F002UT90 |
W49F002U
- 14 -
AC Characteristics, continued
Read Cycle Timing Parameters
(VCC = 5.0V
±10%, VCC = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
W49F002U-70 W49F002U-90 W49F002U-120 UNIT
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
TRC
70
-
90
-
120
-
nS
Chip Enable Access Time
TCE
-
70
-
90
-
120
nS
Address Access Time
TAA
-
70
-
90
-
120
nS
Output Enable Access Time
TOE
-
35
-
40
-
50
nS
CE Low to Active Output
TCLZ
0
-
0
-
0
-
nS
OE Low to Active Output
TOLZ
0
-
0
-
0
-
nS
CE High to High-Z Output
TCHZ
-
25
-
25
-
30
nS
OE High to High-Z Output
TOHZ
-
25
-
25
-
30
nS
Output Hold from Address Change
TOH
0
-
0
-
0
-
nS
Write Cycle Timing Parameters
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Address Setup Time
TAS
0
-
nS
Address Hold Time
TAH
50
-
nS
WE and CE Setup Time
TCS
0
-
nS
WE and CE Hold Time
TCH
0
-
nS
OE High Setup Time
TOES
0
-
nS
OE
High Hold Time
TOEH
0
-
nS
CE
Pulse Width
TCP
100
-
nS
WE Pulse Width
TWP
100
-
nS
WE High Width
TWPH
100
-
nS
Data Setup Time
TDS
50
-
nS
Data Hold Time
TDH
10
-
nS
Byte Programming Time
TBP
-
35
50
S
Erase Cycle Time
TEC
-
0.1
0.2
S
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
(a) High level signal's reference level is VIH and (b) low level signal's reference level is VIL.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W49F002UT90B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F020 | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F020-70 | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F020-70B | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F020-90 | 制造商:WINBOND 制造商全称:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
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