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参数资料
| 型号： | W72M64VB120BI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA159 |
| 封装： | 13 X 22 MM, PLASTIC, BGA-159 |
| 文件页数： | 5/16页 |
| 文件大小： | 660K |
| 代理商： | W72M64VB120BI |
13
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W72M64VB-XBX
June 2009
Rev. 2
FIGURE 14: ALTERNATE CS# CONTROLLED WRITE (ERASE/PROGRAM) OPERATION TIMINGS
Addresses
555 for Program
2AA for Erase
PA
tWC
WE#
OE#
CS#
Data
tAS
tAH
tCPH
tWS
DQ7#
RESET#
tDH
tDS
PD for Program
30 for Sector Erase
10 for Chip Erase
PA for Program
SA for Sector Erase
555 for Chip Erase
Data# Polling
tWH
tGHEL
tWHWH1 OR 2
tBUSY
tHR
A0 for Program
55 for Erase
RY/BY#
tCP
DOUT
NOTES:
1.
Figure indicates last two bus cycles of a program or erase operation.
2.
PA = program address, SA = sector address, PD = program data.
3.
DQ7 is the complement of the data written to the device. DOUT is the data written to the device.
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