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参数资料
| 型号： | W764M32V120SBM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 64M X 32 FLASH 3V PROM, 120 ns, PBGA107 |
| 封装： | 14 X 17 MM, 1 MM PITCH, PLASTIC, BGA-107 |
| 文件页数： | 9/16页 |
| 文件大小： | 511K |
| 代理商： | W764M32V120SBM |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W764M32V-XSBX
June 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
GENERAL DESCRIPTION
The W764MB2V-XSBX device is a 3.0V single power ash
memory. The device utilizes four organized as 33,554,432
words or 67, 108,864 bytes. The device has a 32-bit wide
data bus, can be programmed either in the host system or
in standard EPROM programmers.
Each device requires a single 3.0 volt power supply for both
read and write functions. In addition to a VCC input, a high-
voltage accelerated program (WP# / ACC) input provides
shorter programming times through increased current. This
feature is intended to facilitate factory throughput during
system production, but may also be used in the eld if
desired.
The devices are entirely command set compatible with the
JEDEC single power-supply Flash standard. Commands
are written to the device using standard microprocessor write
timing. Write cycles also internally latch addresses and data
needed for the programming and erase operations.
The sector erase architecture allows memory sectors to
be erased and reprogrammed without affecting the data
contents of other sectors. The device is fully erased when
shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase operation
has begun, the host system need only poll the DQ7 (Data#
Polling) or DQ6 (toggle) status bits or monitor the Ready /
Busy# (RY / BY#) output to determine whether the operation
is complete. To facilitate programming, an Unlock Bypass
mode reduces command sequence over head by requiring
only two write cycles to program data instead of four.
The I/O (VIO) control allows the host system to set the
voltage levels that the device generates and tolerates on
all input levels (address, chip control, and DQ input levels)
to the same voltage level that is asserted on the VIO pin.
This allows the device to operate in a 1.8 V or 3 V system
environment as required.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations during
power transitions. Persistent Sector Protection provides
in-system, comand-enabled protection of any combination
of sectors using a single power supply at VCC. Password
Sector Protection prevents unauthorized write and erase
operations in any combination of sectors through a user-
dened 64-bit password.
The erase Suspend / Erase Resume feature allows the host
system to pause and erase operation in a given sector to
read or program any other sector and then complete the
erase operation. The Program Suspend / Program Resume
feature enables the host system to pause the program
operation in a given sector to read any other sector and
then complete the program operation.
The hardware RESET# pin terminates any operation in
progress and resets the device, after which it is then ready
for a new operation. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the host system to read boot-up
rmware from the Flash memory device.
The device reduces power consumption in the standby
mode when it detects specic voltage levels on CS# and
RESET#, or when addresses have been stable for a
specied period of time.
The Secured Silicon Sector provides a 128-work/256-byte
area for code or data that can be permanently protected.
Once this sector is protected, no further changes within the
sector can occur.
The Write Protect (WP# / ACC) feature protects the rst or
last sector by asserting a logic low on the WP# pin.
相关PDF资料 |
PDF描述 |
|---|---|
| W764M32V120SBC | 64M X 32 FLASH 3V PROM, 120 ns, PBGA107 |
| W764M32V120SBI | 64M X 32 FLASH 3V PROM, 120 ns, PBGA107 |
| W78M32V100BC | 8M X 32 FLASH 3.3V PROM, 100 ns, PBGA159 |
| W78M32V120BM | 8M X 32 FLASH 3.3V PROM, 120 ns, PBGA159 |
| W78M32V90BM | 8M X 32 FLASH 3.3V PROM, 90 ns, PBGA159 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W764M32VESSB | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory |
| W764M32VESSBC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory |
| W764M32VESSBI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory |
| W764M32VESSBM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory |
| W764M32V-XSBX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory |
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