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参数资料
| 型号： | W7MG1M32SVB70BNI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM MODULE, 70 ns, SMA80 |
| 封装： | SIMM-80 |
| 文件页数： | 1/10页 |
| 文件大小： | 197K |
| 代理商： | W7MG1M32SVB70BNI |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W7MG1M32SVx-BN
W7MG21M32SVx-BN
May 2004
Rev. 2
PRELIMINARY*
DESCRIPTION
The W7MG1M32SVx-BN and W7MG21M32SVx-BN are
organized as one and two banks of 1Mx32 respectively.
The modules are based onAMDs MirrorBitAM29LV160M
- 1Mx16 or S29AL016M (optional) Flash device in TSOP
packages which are mounted on an FR4 substrate.
Both modules offer access times between 70 and 120ns
allowing for operation of high-speed microprocessors
without wait states.
FEATURES
1Mx32 and 2x1Mx32 Densities
Based on AMD - AM29LV160M Flash Device
Spansion - S29AL016M (optional)
High Performance
Access time as fast as 70ns
0.7s typical sector erase time
3V for read, erase, and program operations
Flexible, Sector Architecture
One 16Kbyte, two 8Kbyte, one 32Kbyte and
thirty-one 64Kbyte sectors.
Any combination of sectors can be erased
Also supports full chip erase
W7MG1M32SVx-BN: 1Mx32 80 PIN SIMM
W7MG21M32SVx-BN: 2x1Mx32 80 PIN SIMM
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBit 3.0V, Boot Sector
Flash Memory Module
FIG. 1 – BLOCK DIAGRAMS
DQ16-31
1Mx16
WE#
CE#
Addr
0-19
DQ0-15
WE2#
DQ0-15
1Mx16
WE#
CE#
CE0#
OE#
CE#
Addr
0-19
Addr 0-19
DQ0-15
WE0#
1Mx16
WE#
CE#
Addr
0-19
DQ0-15
WE2#
1Mx16
WE#
CE#
CE0#
OE#
CE#
Addr
0-19
Addr 0-19
DQ0-15
WE0#
DQ16-31
1Mx16
WE#
CE#
Addr
0-19
DQ0-15
1Mx16
WE#
CE#
CE1#
CE#
Addr
0-19
DQ0-15
Top boot block congurations
Bottom boot block optional. Contact WEDC.
Embedded Erase Algorithms
Automatically preprograms and erases the chip
or any combination of sectors
Embedded Program Algorithms
Automatically programs and veries data at
specied address
Data Polling and Toggle Bit feature for detection of
program or erase cycle completion
Low Power Dissipation
30mA per Device Active Current
10μA per Device CMOS Standby Current
Single 3.3V ±10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and industrial operating temperature
range
BNC = 0°C to 70°C Commercial
BNI = -40°C to 85°C Industrial
Package
80 Pin SIMM (JEDEC) Standard
* This product is under development, is not qualied or characterized and is subject to
change without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| W7MG21M32SVB90BNC | 2M X 32 FLASH 3.3V PROM MODULE, 90 ns, SMA80 |
| W7MG1M32SVT120BNC | 1M X 32 FLASH 3.3V PROM MODULE, 120 ns, SMA80 |
| W7PCX-5 | POWER/SIGNAL RELAY, DPDT, MOMENTARY, 0.067A (COIL), 5VDC (COIL), 200mW (COIL), 2A (CONTACT), 24VDC (CONTACT), THROUGH HOLE-STRAIGHT MOUNT |
| W82M32V-12BC | 2M X 32 MULTI DEVICE SRAM MODULE, 12 ns, PBGA255 |
| W82M32V-17BM | 2M X 32 MULTI DEVICE SRAM MODULE, 17 ns, PBGA255 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W7MG1M32SVB90BNC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG1M32SVB90BNI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG1M32SVT120BNC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG1M32SVT120BNI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
| W7MG1M32SVT70BNC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module |
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