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参数资料
| 型号： | W942516BH-75 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.75 ns, PDSO66 |
| 封装： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件页数： | 1/45页 |
| 文件大小： | 1340K |
| 代理商： | W942516BH-75 |
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W942516BH
4M
× 4 BANKS × 16 BIT DDR SDRAM
Publication Release Date: March 19, 2002
- 1 -
Revision A1
Table of Contents-
1. GENERAL DESCRIPTION ..................................................................................................................3
2. FEATURES ..........................................................................................................................................3
3. KEY PARAMETERS ............................................................................................................................3
4. PIN CONFIGURATION........................................................................................................................4
5. PIN DESCRIPTION .............................................................................................................................5
6. BLOCK DIAGRAM ...............................................................................................................................6
7. ABSOLUTE MAXIMUM RATINGS ......................................................................................................7
8. RECOMMENDED DC OPERATING CONDITIONS............................................................................7
9. CAPACITANCE ...................................................................................................................................8
10. LEAKAGE AND OUPPUT BUFFER CHARACTERISTICS...............................................................8
11. DC CHARACTERISTICS...................................................................................................................9
12. AC CHARACTERISTICS AND OPERATING CONDITION.............................................................10
13. AC TEST CONDITIONS ..................................................................................................................11
14. OPERATION MODE ........................................................................................................................13
Simplified Truth Table............................................................................................................................. 13
Function Truth Table............................................................................................................................... 14
Function Truth Table for CKE ................................................................................................................. 17
15. SIMPLIFIED STATE DIAGRAM ......................................................................................................18
16. FUNCTIONAL DESCRIPTION ........................................................................................................19
Power Up Sequence............................................................................................................................... 19
Command Function ................................................................................................................................ 19
Read Operation ...................................................................................................................................... 22
Write Operation....................................................................................................................................... 22
Precharge ............................................................................................................................................... 22
Burst Termination ................................................................................................................................... 23
Refresh Operation .................................................................................................................................. 23
Power Down Mode ................................................................................................................................. 23
Mode Register Operation........................................................................................................................ 23
17. TIMING WAVEFORMS....................................................................................................................27
Command Input Timing .......................................................................................................................... 27
Timing of the CLK Signals ...................................................................................................................... 27
Read Timing (Burst Length = 4).............................................................................................................. 28
Write Timing (Burst Length = 4).............................................................................................................. 29
DM, DATA MASK (W942508BH /W942504BH) ..................................................................................... 30
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W942516CH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M X 4 BANKS X 16 BIT DDR SDRAM |
| W9425G6DH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM |
| W9425G6EH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
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