参数资料
型号: W963B6BBN70E
厂商: WINBOND ELECTRONICS CORP
元件分类: SRAM
英文描述: 512K X 16 PSEUDO STATIC RAM, 65 ns, PBGA48
封装: 6 X 8 MM, 0.75 MM PITCH, TFBGA-48
文件页数: 2/29页
文件大小: 948K
代理商: W963B6BBN70E
W963B6BBN
(Read Operation, Continued)
Notes:
*1: The output load is 30 pF
*2: The output load is 5 pF.
*3: The tCE is applicable if OE is brought to Low before CE1 goes Low and is also applicable if actual value of both or
either tASO or tCLOL is shorter than specified value.
*4: Applicable if OE is brought to Low before CE1 goes Low.
*5: The tASO, tCLOL(min.) and tOP(min) are reference values when the access time is determined by tOE. If actual value of
each parameter is shorter than specified minimum value, tOE become longer by the amount of subtracting actual
value from specified minimum value.
For example, if actual tASO, tASO(actual), is shorter than specified minimum value, tASO(min.), during OE control
access (ie., CE1 stays Low), the tOE become tOE(max.) + tASO(min.) - tASO(actual).
*6: The tASO[ABS] and tOP[ABS] is the absolute minimum value during OE control access.
*7: If actual value of either tCLOL or tOP is shorter than specified minimum value, both tOLAH and tOLCH become tRC(min.) -
tCLOL(actual) or tRC(min) - tOP(actual).
*8: Maximum value is applicable if CE1 is kept at low.
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