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参数资料
| 型号： | W963B6BBN80I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48 |
| 封装： | 6 X 8 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件页数： | 23/29页 |
| 文件大小： | 948K |
| 代理商： | W963B6BBN80I |
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W963B6BBN
1. GENERAL DESCRIPTION
W963B6BBN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized
as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175
m process
technology; W963B6BBN delivers fast access cycle time and low power consumption. It is suitable for
mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and
power dissipation is most concerned.
2. FEATURES
Asynchronous SRAM interface
Fast access cycle time:
tRC = 70 nS (-70), 80 nS (-80)
Low power consumption:
IDDA1 = 20 mA Max.
IDDS1 = 70 A Max.
Byte write control
Power supply:
VDD = +2.3V to +2.7V
Temperature:
TA = 0°C to +70°C
TA = -25°C to +85°C (Extended temperature)
TA = -40°C to +85°C (Industrial temperature)
3. PRODUCT OPTIONS
PARAMETER
W963B6BBN70
W963B6BBN80
tRC
70 nS min.
80 nS Min.
IDDS1
70
A max.
70
A Max.
IDDA1
20 mA
VDD
2.3V to 2.7V
Publication Release Date: March 11, 2003
- 3 -
Revision A1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W963L6ABN | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963L6ABN70 | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963L6ABN70E | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963L6ABN70I | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963L6ABN80 | 制造商:WINBOND 制造商全称:Winbond 功能描述:512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
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