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| 型号： | W971GG6IB-25 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| 封装： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 5/86页 |
| 文件大小： | 1360K |
| 代理商： | W971GG6IB-25 |
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W971GG6IB
Publication Release Date: Oct. 23, 2009
- 13 -
Revision A02
7.2.2.3
Extend Mode Register Set Command (2), EMR (2)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "L", BA1 = "H", BA2 = "L" A0 to A12 =
Register data)
The extended mode register (2) controls refresh related features. The default value of the extended
mode register (2) is not defined, therefore the extended mode register (2) must be programmed during
initialization for proper operation.
The DDR2 SDRAM should be in all bank precharge state with CKE already high prior to writing into
the extended mode register (2). The mode register set command cycle time (tMRD) must be satisfied to
complete the write operation to the extended mode register (2). Mode register contents can be
changed using the same command and clock cycle requirements during normal operation as long as
all banks are in the precharge state.
BA1 BA0 A12
A11 A10
A9
A8A7
A6A5
A4A3
A2
A1A0
1
0
SELF
0*1
Address Field
Extended Mode Register (2)
0*1
BA2
0*1
BA1 BA0
MRS mode
0
1
11
MRS
EMR (1)
EMR (2)
EMR (3)
A7
1
0
Disable
High Temperature Self Refresh Rate Enable
Enable*2
Notes:
1. The rest bits in EMR (2) is reserved for future use and all bits in EMR (2) except A7, BA0, BA1 and BA2 must be programmed
to 0 when setting the extended mode register (2) during initialization.
2. When DRAM is operated at 85 °C ≤ TCASE ≤ 95 °C the extended Self Refresh rate must be enabled by setting bit A7 to "1"
before the Self Refresh mode can be entered.
Figure 4—EMR (2)
相关PDF资料 |
PDF描述 |
|---|---|
| W9751G6JB-25A | 32M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| W9751G8JB-18 | DDR DRAM, PBGA84 |
| W9812G21H-6I | 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| W9812G21H-6C | 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86 |
| W9812G6JH-6 | 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W971GG6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM |
| W971GG6JB-18 | 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS |
| W971GG6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA |
| W971GG6JB25I | 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 125°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) 其它名称:CAV24C32WE-GT3OSTR |
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
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