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参数资料
| 型号： | WB1220X |
| 英文描述： | Serial-Input Frequency Synthesizer |
| 中文描述： | 串行输入频率合成器 |
| 文件页数： | 5/9页 |
| 文件大小： | 174K |
| 代理商： | WB1220X |
WB1220
5
Note:
1.
IDOVS T; Charge pump current variation vs. temperature.
[IIDO(SI)@TI – IIDO(SI)@25° CI]/IIDO(SI)@25°CI * 100% and
[IIDO(SO)@TI – IIDO(SO)@25°CI]/IIDO(SO)@25°CI *100%.
Electrical Characteristics: VCC = 3.0V, VP = 3.0V, TA = –40°C to +85°C, Unless otherwise specified
Parameter
Description
Test Condition
Pin
Min.
Typ.
Max.
Unit
ICC
Power Supply Current
VCC
7mA
IPD
Power-down Current
Power-down, VCC = 3.0V
VCC
6100
A
FIN
Maximum Operating
Frequency
FIN
2.0
GHz
FOSC
Oscillator Input Frequency
No load on OSC_OUT
OSC_IN
60
MHz
25
MHz
PFIN
Input Sensitivity
VCC = 2.7V
FIN
–15
4
dBm
VCC = 5.5V
–10
4
dBm
VOSC
Oscillator Input Sensitivity
OSC_IN
0.5
VP–P
IIH, IIL
Oscillator Input Current
–100
100
A
VIH
High Level Input Voltage
VCC = 5.0V
DATA,
CLOCK,
LE
VCC * 0.8
V
VIL
Low Level Input Voltage
VCC * 0.3
V
IIH
High Level Input Current
–10
1
10
A
IIL
Low Level Input Current
–10
1
10
A
VOH
High Level Output Voltage
FO/LD
2.2
V
VOL
Low Level Output Voltage
0.4
V
IDO(SO)
IDO, Source Current
VP = 3.0V, VDO = VP/2
DO
–3.2
mA
VP = 5.0V, VDO = VP/2
–3.8
mA
IDOH(SI)
IDO High, Sink Current
VP = 3.0V, VDO = VP/2
DO
3.2
mA
VP = 5.0V, VDO = VP/2
3.8
mA
ID
O
IDO Charge Pump Sink and
Source Mismatch
VDO = VP/2
[IIDO(SI)I – IIDO(SO)I]/
[1/2*{IIDO(SI)]I+IIDO(SO)I}]*100%
5%
IDO vs T
Charge Pump Current
Variation vs. Temperature
–40°C<T<85°C, VDO = VP/2
[1]
5
%
IDO-tri
Charge Pump High-
Impedance Leakage
Current
±2.5
nA
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