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参数资料
| 型号： | WE256K8150CI |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | PROM |
| 英文描述： | 256K X 8 EEPROM 5V MODULE, 150 ns, CDIP32 |
| 封装： | HERMETIC SEALED, DUAL CAVITY, BOTTOM BRAZED, CERAMIC, DIP-32 |
| 文件页数： | 12/13页 |
| 文件大小： | 678K |
| 代理商： | WE256K8150CI |
WE512K8, WE256K8,
WE128K8-XCX
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2007
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DATA POLLING
Operation with data polling permits a faster method of
writing to the EEPROM. The actual time to complete the
memory programming cycle is faster than the guaranteed
maximum.
The EEPROM features a method to determine when
the internal programming cycle is completed. After a
write cycle is initiated, the EEPROM will respond to read
cycles to provide the microprocessor with the status
of the programming cycle. The status consists of the
last data byte written being returned with data bit I/O7
complemented during the programming cycle, and I/O7
true after completion.
Data polling allows a simple bit test operation to
determine the status of the EEPROM. During the internal
programming cycle, a read of the last byte written will
produce the complement of the data on I/O7. For example,
if the data written consisted of I/O7 = HIGH, then the data
read back would consist of I/O7 = LOW.
A polled byte write sequence would consist of the following
steps:
1.
write byte to EEPROM
2.
store last byte and last address written
3.
release a time slice to other tasks
4.
read byte from EEPROM - last address
5.
compare I/O7 to stored value
a) If different, write cycle is not completed, go to
step 3.
b) If same, write cycle is completed, go to step 1 or
step 3.
DATA POLLING AC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
512Kx8
256Kx8
128Kx8
Unit
Min
Max
Min
Max
Min
Max
Data Hold Time
tDH
10
0
ns
Output Enable Hold Time
tOEH
10
0
ns
Output Enable To Output Delay
tOE
100
ns
Write Recovery Time
tWR
000
ns
FIGURE 8 – DATA POLLING WAVEFORMS
OE#
ADDRESS
CS1-4#
WE1-4#
I/O7
相关PDF资料 |
PDF描述 |
|---|---|
| WF128K64-60G4WC5A | 1M X 8 FLASH 5V PROM MODULE, 60 ns, CQFP116 |
| WS256K64-35G4WCA | 1M X 16 MULTI DEVICE SRAM MODULE, 35 ns, CQMA116 |
| WMS128K8-35DEM | 128K X 8 STANDARD SRAM, 35 ns, CDSO32 |
| WMS128K8-20FCA | 128K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| WMS128K8-20FECA | 128K X 8 STANDARD SRAM, 20 ns, CDFP32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WE256K8-150CI | 制造商:Microsemi Corporation 功能描述:256K X 8 EEPROM MODULE, 150NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WE256K8-150CIA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CM | 制造商:White Electronic Designs 功能描述:Res Thin Film 0603 2.8K Ohm 0.1% 1/16W ±50ppm/°C Molded SMD Paper T/R 制造商:Microsemi Corporation 功能描述:256K X 8 EEPROM MODULE, 150NS, 32 DIP, MIL-SCREENED - Bulk |
| WE256K8-150CMA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CQ | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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