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参数资料
| 型号： | WE256K8150CIA |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | PROM |
| 英文描述： | 256K X 8 EEPROM 5V MODULE, 150 ns, CDIP32 |
| 封装： | HERMETIC SEALED, DUAL CAVITY, BOTTOM BRAZED, CERAMIC, DIP-32 |
| 文件页数： | 10/13页 |
| 文件大小： | 678K |
| 代理商： | WE256K8150CIA |
WE512K8, WE256K8,
WE128K8-XCX
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2007
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
WRITE CYCLE TIMING
Figures 6 and 7 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing
the CS# line low. Write enable consists of setting the WE
line low. The write cycle begins when the last of either CS#
or WE# goes low.
The WE# line transition from high to low also initiates
an internal 150μsec delay timer to permit page mode
operation. Each subsequent WE# transition from high to
low that occurs before the completion of the 150μsec time
out will restart the timer from zero. The operation of the
timer is the same as a retriggerable one-shot.
WRITE
Write operations are initiated when both CS# and WE#
are low and OE# is high. The EEPROM devices support
both a CS# and WE# controlled write cycle. The address is
latched by the falling edge of either CS# or WE#, whichever
occurs last.
The data is latched internally by the rising edge of either
CS# or WE#, whichever occurs rst. A byte write operation
will automatically continue to completion.
AC WRITE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
512K x 8
256K x 8
128K x 8
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time, TYP = 6mS
tWC
10
ms
Address Set-up Time
tAS
10
30
ns
Write Pulse Width (WE# or CS#)
tWP
150
ns
Chip Select Set-up Time
tCS
000
ns
Address Hold Time (1)
tAH
125
50
ns
Data Hold Time
tDH
10
0
ns
Chip Select Hold Time
tCH
000
ns
Data Set-up Time
tDS
100
ns
Output Enable Set-up Time
tOES
10
30
ns
Output Enable Hold Time
tOEH
10
0
ns
Write Pulse Width High
tWPH
50
ns
NOTES:
1. A17 and A18 must remain valid through WE# and CS# low pulse, for 512K x 8.
A15, A16, and A17 must remain valid through WE# and CS# low pulse, for 256K x 8.
A15 and A16 must remain valid through WE# and CS# low pulse, for 128K x 8.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WE256K8-150CIA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CM | 制造商:White Electronic Designs 功能描述:Res Thin Film 0603 2.8K Ohm 0.1% 1/16W ±50ppm/°C Molded SMD Paper T/R 制造商:Microsemi Corporation 功能描述:256K X 8 EEPROM MODULE, 150NS, 32 DIP, MIL-SCREENED - Bulk |
| WE256K8-150CMA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CQ | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CQA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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