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参数资料
| 型号： | WE512K8200CM |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| 封装： | SINGLE CAVITY, CERAMIC, DIP-32 |
| 文件页数： | 9/13页 |
| 文件大小： | 133K |
| 代理商： | WE512K8200CM |
White Microelectronics Phoenix, AZ (602) 437-1520
10
EEPROM
MODULES
5
WE512K8, WE256K8, WE128K8-XCX
Figure 5 shows Read cycle waveforms. A read cycle begins
with selection address, chip select and output enable. Chip
select is accomplished by placing the CS line low. Output
enable is done by placing the OE line low. The memory places
the selected data byte on I/O0 through I/O7 after the access
time. The output of the memory is placed in a high impedance
state shortly after either the OE line or CS line is returned to a
high level.
READ
AC READ CHARACTERISTICS (SEE FIGURE 5)
FOR WE512K8-XCX
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-150
-200
-250
-300
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
150
200
250
300
ns
Address Access Time
tACC
150
200
250
300
ns
Chip Select Access Time
tACS
150
200
250
300
ns
Output Hold from Address Change, OE or CS
tOH
00
ns
Output Enable to Output Valid
tOE
85
100
125
ns
Chip Select or Output Enable to High Z Output
tDF
70
ns
FOR WE256K8-XCX AND WE128K8-XCX
Parameter
Symbol
-150
-200
Unit
Min
Max
Min
Max
Read Cycle Time
tRC
150
200
ns
Address Access Time
tACC
150
200
ns
Chip Select Access Time
tACS
150
200
ns
Output Hold from Address Change, OE or CS
tOH
10
ns
Output Enable to Output Valid
tOE
85
100
ns
Chip Select or Output Enable to High Z Output
tDF
70
ns
FIG. 5
READ WAVEFORMS
t
ADDRESS
CS
OE
OUTPUT
OH
tDF
t ACC
t RC
t OE
tACS
OUTPUT
VALID
ADDRESS VALID
HIGH Z
NOTE:
OE may be delayed up to tACS-
tOE after the falling edge of CS
without impact on tOE or by tACC-
tOE after an address change
without impact on tACC.
相关PDF资料 |
PDF描述 |
|---|---|
| WE128K32-300G2TCA | 128K X 32 EEPROM 5V MODULE, 300 ns, CQFP68 |
| WE128K32-120G2TI | 128K X 32 EEPROM 5V MODULE, 120 ns, CQFP68 |
| WE128K32P-200H1M | 128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 |
| WE128K32P-140H1C | 128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 |
| WMS256K16L-35FLC | 256K X 16 STANDARD SRAM, 35 ns, CDFP44 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WE512K8-200CM | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 200NS, 32 DIP, MIL-SCREENED - Bulk |
| WE512K8-200CMA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-200CQ | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-200CQA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-250CC | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 250NS, 32 DIP, COMMERCIAL SCREENED - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 EEPROM MODULE, 250NS, 32 DIP, COMMERCIAL SCREENED - Bulk |
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