参数资料
型号: WED3DG6418V10D1
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 16M X 64 SYNCHRONOUS DRAM MODULE, DMA144
封装: SODIMM-144
文件页数: 4/5页
文件大小: 449K
代理商: WED3DG6418V10D1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
WED3DG6418V-D1
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
WED3DG6418V-D1
ADVANCED
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
960
800
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
20
mA
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
20
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20
160
mA
ICC2NS
CKE ≥ VIH(min), CLK ≤VIL(max), tCC = ∞
Input signals are stable
80
Active Standby Current in
Power-Down Mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
50
mA
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
50
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
240
mA
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
200
mA
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
1040
880
mA
1
Refresh Current
ICC5
tRC ≥ tRC(min)
1760
1520
mA
2
Self Refresh Current
ICC6
CKE ≤ 0.2V
20
mA
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