- 您现在的位置：买卖IC网 > PDF目录297788 > WED3DG7265V7D1 (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 72 SYNCHRONOUS DRAM MODULE, DMA144 PDF资料下载
参数资料
| 型号： | WED3DG7265V7D1 |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 SYNCHRONOUS DRAM MODULE, DMA144 |
| 封装： | SODIMM-144 |
| 文件页数： | 4/6页 |
| 文件大小： | 338K |
| 代理商： | WED3DG7265V7D1 |
WED3DG7265V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
WED3DG7265V-D1
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C ≤ +70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
1,530 1,400
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
50
mA
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
50
Precharge Standby Current
in Non-Power Down Mode
Icc2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20
370
mA
Icc2NS
CKE ≥ VIH(min), CLK ≤VIL(max), tCC = ∞
Input signals are stable
200
Active standby current in
power-down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
80
mA
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
80
Active standby current in
non power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
550
mA
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
Input signals are stable
410
mA
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
2,070 1,620
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
3,150 2,880
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
60
mA
相关PDF资料 |
PDF描述 |
|---|---|
| WED8L24514V15BI | 512K X 24 MULTI DEVICE SRAM MODULE, 15 ns, PBGA119 |
| WED9LAPC2C16V8BC | SPECIALTY MEMORY CIRCUIT, PBGA192 |
| WEDPN8M64VR-100BC | 8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| WEDPN8M64VR-66BI | 8M X 64 SYNCHRONOUS DRAM MODULE, 7.5 ns, PBGA219 |
| WF-128K32-120G4I | 512K X 8 FLASH 12V PROM MODULE, 120 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WED3DG7265V-D1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM Modules - 144 Pin SO-DIMM. ECC Unbuffered |
| WED3DG7265V-D2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM Modules - 168 Pin DIMM. ECC Unbuffered |
| WED3DG7266V10D1I-MG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 SDRAM, UNBUFFERED, w/PLL |
| WED3DG7266V10D1I-SG | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 SDRAM, UNBUFFERED, w/PLL |
| WED3DG7266V10D1I-XX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 SDRAM, UNBUFFERED, w/PLL |
发布紧急采购，3分钟左右您将得到回复。