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参数资料
| 型号： | WED3EG72M32S403JD3MG |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
| 封装： | ROHS COMPLIANT, DIMM-184 |
| 文件页数： | 7/12页 |
| 文件大小： | 190K |
| 代理商： | WED3EG72M32S403JD3MG |
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
WED3EG7232S-JD3
June 2006
Rev. 6
PRELIMINARY
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 to 3.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
9W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
0°C ≤ TA ≤ 70°C, DDR400: VCC = VCCQ = +2.6V ± 0.1V; DDR333, 266, 200: VCC = VCCQ = 2.5V ± 0.2V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.3
2.7
V
Supply Voltage
VCCQ
2.3
2.7
V
Reference Voltage
VREF
1.15
1.35
V
Termination Voltage
VTT
1.15
1.35
V
Input High Voltage
VIH
VREF + 0.15
VCCQ + 0.3
V
Input Low Voltage
VIL
-0.3
VREF -0.15
V
Output High Voltage
VOH
VTT + 0.76
—
V
Output Low Voltage
VOL
—VTT-0.76
V
CAPACITANCE
TA = 25°C. f = 1MHz, DDR400: VCC = VCCQ = +2.6V ± 0.1V; DDR333, 266, 200: VCC = VCCQ = 2.5V ± 0.2V
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
32
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
32
pF
Input Capacitance (CKE0, CKE1)
CIN3
32
pF
Input Capacitance (CK0#,CK0)
CIN4
32
pF
Input Capacitance (CS0#, CS1#)
CIN5
32
pF
Input Capacitance (DQM0-DQM8)
CIN6
8pF
Input Capacitance (BA0-BA1)
CIN7
32
pF
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
8pF
Data input/output capacitance (CB0-CB7)
COUT
8pF
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