参数资料
型号: WED416S16030A7SI
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: TSOP2-54
文件页数: 20/26页
文件大小: 398K
代理商: WED416S16030A7SI
3
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
White Electronic Designs
WED416S16030A
Parameter
Symbol
Conditions
-7
-75
-8
-10 Units Notes
Operating Current (One Bank Active)
ICC1
Burst Length = 1, tRC tRC(min)
190 170 160
160
mA
1
Operating Current (Burst Mode)
ICC4
Page Burst, 2 banks active, tCCD = 2 clocks
210 200 180
180
mA
1
Precharge Standby Current in
ICC2P
CKE VIL(max), tCC = 15ns
3
mA
Power Down Mode
ICC2PS
CKE, CLK VIL(max), tCC = , Inputs Stable
3
mA
ICC1N
CKE = VIH, tCC = 15ns
28
mA
Precharge Standby Current in
Input Change every 30ns
ICC1NS
CKE VIH(min), tCC =
15
mA
Non-Power Down Mode
No Input Change
Active Standby Current in
ICC3P
CKE VIL(max), tCC = 15ns
8
mA
Power Down Mode
ICC3PS
CKE VIL(max), tCC =
88
8
mA
ICC2N
CKE = VIH, tCC = 15ns
40
mA
Active Standby Current in
Input Change every 30ns
Non-Power Down Mode
ICC2NS
CKE VIH(min), tCC = , No Input Change
35
mA
Refresh Current
ICC5
tRC tRC(min)
280 270 260
260
mA
2
Self Refresh Current
ICC6
CKE 0.2V
4
mA
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
Parameter
Symbol
Max
Unit
Input Capacitance (A0-12, BA0-1)CI1
4pF
Input Capacitance (CLK, CKE, RAS,
CI2
4pF
CAS, WE, CE, L(U)DQM )
Input/Output Capacitance (DQ0-15)COUT
6.5
pF
Parameter
Symbol Min Typ
Max
Unit Notes
Supply Voltage
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0 VDD +0.3 V
Input Low Voltage
VIL
-0.3
0.8
V
Output High Voltage
VOH
2.4
V (IOH = -2mA)
Output Low Voltage
VOL
0.4
V (IOL = 2mA)
Input Leakage Voltage
IIL
-5
5
A
Output Leakage Voltage
IOL
-10
10
A
RECOMMENDED DC OPERATING CONDITIONS
(VOLTAGE REFERENCED TO: VSS = 0V, TA = -40°C TO +85°C)
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
(TA = 25°C, f = 1MHZ, VDD = 3.3V TO 3.6V)
Parameter
Symbol
Min
Max
Units
Power Supply Voltage
VDD
-1.0
+4.6
V
Input Voltage
VIN
-1.0
+4.6
V
Output Voltage
VOUT
-1.0
+4.6
V
Operating Temperature
TOPR
-40
+85
°C
Storage Temperature
TSTG
-55
+125
°C
Power Dissipation
PD
1.0
W
Short Circuit Output Current
IOS
50
mA
Stresses greater than those listed under "Absolute Maximum Ratings"
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions greater than those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = -40°C TO +85°C)
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