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| 型号： | WED9LC6416V1312BI |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA153 |
| 封装： | MO-163, BGA-153 |
| 文件页数： | 1/27页 |
| 文件大小： | 334K |
| 代理商： | WED9LC6416V1312BI |
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
White Electronic Designs
WED9LC6416V
October 2001, Rev. 1
ECO # 14663
128Kx32 SSRAM/4Mx32 SDRAM
EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP
FEATURES
n Clock speeds:
SSRAM: 200, 166, 150, and 133 MHz
SDRAMs: 125 and 100 MHz
n DSP Memory Solution
Texas Instruments TMS320C6201
Texas Instruments TMS320C6701
n Packaging:
153 pin BGA, JEDEC MO-163
n 3.3V Operating supply voltage
n Direct control interface to both the SSRAM and SDRAM
por ts on the “C6x”
n Common address and databus
n 65% space savings vs. monolithic solution
n Reduced system inductance and capacitance
DESCRIPTION
The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous
Pipeline SRAM and a 4M x 32 Synchronous DRAM array
constructed with one 128K x 32 SSRAM and two 4M x 16
SDRAM die mounted on a multilayer laminate substrate. The
device is packaged in a 153 lead, 14mm by 22mm BGA.
The WED9LC6416VxxBC provides a total memory solution
for the Texas Instr uments TMS320C6201 and the
TMS320C6701 DSPs.
The Synchronous Pipeline SSRAM is available with clock
speeds of 200, 166, 150, and 133 MHz, allowing the user to
develop a fast external memory for the SSRAM interface port.
The SDRAM is available in clock speeds of 125 and 100
MHz, allowing the user to develop a fast external memory
for the SDRAM interface por t.
The WED9LC6416V is available in both commercial and in-
dustrial temperature ranges.
FIG. 1 PIN CONFIGURATION
TOP VIEW
12
34
5
6
7
8
9
A
DQ19
DQ23
VCC
VSS
VCC
DQ24
DQ28
A
B
DQ18
DQ22
VCC
VSS
SDCE
VSS
DQ25
DQ29
B
C
VCCQ
VCC
SDWE SDA10 NC
VCC
VCCQ
C
D
DQ17
DQ21
VCC
VSS
VCC
DQ26
DQ30
D
E
DQ16
DQ20
VCC
VSS
SDCLK VSS
VCC
DQ27
DQ31
E
F
VCCQ
VCC
VSS
VCC
VCCQ
F
G
NC
SDRAS SDCAS VSS
A2
A4
A5
G
H
NC
A8
VSS
NC
A1
A3
A10
H
J
A6
A7
A9
VSS
NC
A0
A11
A12
J
K NC/A17 NC/A18 NC/A19 VSS
VSS
NC
A13
A14
K
L
NC
BWE2 BWE3
NC
A15
A16
L
M
VCCQ
VCC
BWE0 BWE1
NC
VCC
VCCQ
M
N
DQ12
DQ11
VCC
VSS
VCC
DQ4
DQ0
N
P
DQ13
DQ10
VCC
VSS
SSCLK
VSS
VCC
DQ5
DQ1
P
R
VCCQ
VCC
VSS
VCC
VCCQ
R
T
DQ14
DQ9
VCC
SSADC SSWE
NC
VCC
DQ6
DQ2
T
U
DQ15
DQ8
VCC
SSOE
SSCE
NC
VCC
DQ7
DQ3
U
12
34
5
6
7
8
9
A0-16
Address Bus
DQ0-31
Data Bus
SSCLK
SSRAM Clock
SSADC
SSRAM Address Status Control
SSWE
SSRAM Write Enable
SSOE
SSRAM Output Enable
SDCLK
SDRAM Clock
SDRAS
SDRAM Row Address Strobe
SDCAS
SDRAM Column Address Strobe
SDWE
SDRAM Write Enable
SDA10
SDRAM Address 10/auto precharge
BWE0-3
SSRAM Byte Write Enables
SDRAM SDQM 0 -3
SSCE
Chip Enable SSRAM Device
SDCE
Chip Enable SDRAM Device
VCC
Power Supply pins,3.3V
VCCQ
Data Bus Power Supply pins,
3.3V (2.5V future)
Vss
Ground
NC
No Connect
NC/ANX
Future Depth Expansion
PIN DESCRIPTION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WED9LC6416V1510BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1510BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1512BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1512BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1610BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
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