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参数资料
| 型号： | WEDPN8M64VR-100BM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 1/13页 |
| 文件大小： | 377K |
| 代理商： | WEDPN8M64VR-100BM |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN8M64VR-XBX
November 2003 Rev. 4
The 64MByte (512Mb) SDRAM is a high-speed CMOS, dy-
namic random-access memory using 4 chips containing
134,217,728 bits. Each chip is internally configured as a
quad-bank DRAM with a synchronous interface. Each of the
chip’s 33,554,432-bit banks is organized as 4,096 rows by
512 columns by 16 bits. The MCP also incorporates two
16-bit universal bus drivers for input control signals and ad-
dress.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a pro-
grammed number of locations in a programmed sequence.
Accesses begin with the registration of an ACTIVE com-
mand, which is then followed by a READ or WRITE com-
mand. The address bits registered coincident with the AC-
TIVE command are used to select the bank and row to be
accessed (BA0, BA1 select the bank; A0-11 select the row).
The address bits registered coincident with the READ or
WRITE command are used to select the star ting column lo-
cation for the burst access.
The SDRAM provides for programmable READ or WRITE burst
lengths of 1, 2, 4 or 8 locations, or the full page, with a
burst terminate option. An AUTO PRECHARGE function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence.
The 512Mb SDRAM uses an internal pipelined architecture
to achieve high-speed operation. This architecture is com-
patible with the 2
n rule of prefetch architectures, but it also
allows the column address to be changed on every clock
cycle to achieve a high-speed, fully random access.
Precharging one bank while accessing one of the other three
banks will hide the precharge cycles and provide seam-
less, high-speed, random-access operation.
The 512Mb SDRAM is designed to operate in 3.3V, low-
power memory systems. An auto refresh mode is provided,
along with a power-saving, power-down mode.
All inputs and outputs are LVTTL compatible. SDRAMs offer
substantial advances in DRAM operating performance, in-
cluding the ability to synchronously burst data at a high data
rate with automatic column-address generation, the ability
to interleave between internal banks in order to hide
precharge time and the capability to randomly change col-
umn addresses on each clock cycle during a burst access.
8Mx64 Registered Synchronous DRAM
! Registered for enhanced performance of bus speeds
of 66 MHz and 100 MHz
! Package:
219 Plastic Ball Grid Array (PBGA), 32 x 25mm
! Single 3.3V ±0.3V power supply
! Fully synchronous; all signals registered on positive edge
of system clock cycle
! Internal pipelined operation; column address can be
changed every clock cycle
! Internal banks for hiding row access/precharge
! Programmable Burst length 1,2,4,8 or full page
! 4096 refresh cycles
! Commercial, Industrial and Military Temperature Ranges
! Organized as 8M x 64
User configurable as 2x8Mx32 or 4x8Mx16
! Weight: WEDPN8M64VR-XBX - 2.5 grams typical
FEATURES
BENEFITS
! 41% SPACE SAVINGS
! Reduced part count
! Reduced trace lengths for lower parasitic capacitance
! Glueless connection to memory controller/PCI bridge
! Laminate interposer for optimum TCE match
! Suitable for hi-reliability applications
! Upgradeable to 16M x 64 density (contact factory for
information)
* This data sheet describes a product that is subject to change without notice.
GENERAL DESCRIPTION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WEDPN8M64VR-XBX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Registered SDRAM MCP |
| WEDPN8M64V-XB2X | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:8Mx64 Synchronous DRAM |
| WEDPN8M64V-XBX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM MCP |
| WEDPN8M72LV-100B2I | 制造商:Microsemi Corporation 功能描述:UCKT,SDRAM8MX72,219BGA,8M72LV - Bulk |
| WEDPN8M72V-100B2C | 制造商:Microsemi Corporation 功能描述:8M X 72 SDRAM MODULE, 3.3V, 100 MHZ, 219 PBGA 21MM X 25MM, C - Bulk |
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