- 您现在的位置：买卖IC网 > PDF目录231503 > WEDPNF8M721V-1012BC SPECIALTY MEMORY CIRCUIT, PBGA275 PDF资料下载
参数资料
| 型号： | WEDPNF8M721V-1012BC |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA275 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-275 |
| 文件页数： | 1/42页 |
| 文件大小： | 686K |
| 代理商： | WEDPNF8M721V-1012BC |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WEDPNF8M721V-XBX
October 2000 Rev. 1
8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module
Multi-Chip Package ADVANCED*
FEATURES
s Package:
275 Plastic Ball Grid Array (PBGA), 32mm x 25mm
s Commercial, Industrial and Military Temperature Ranges
s Weight:
WEDPNF8M721V-XBX - 2.5 grams typical
SDRAM PERFORMANCE FEATURES
s Organized as 8M x 72
s High Frequency = 100, 125MHz
s Single 3.3V
±0.3V power supply
s Fully Synchronous; all signals registered on positive edge of
system clock cycle
s Internal pipelined operation; column address can be changed
every clock cycle
s Internal banks for hiding row access/precharge
s Programmable Burst length 1,2,4,8 or full page
s 4096 refresh cycles
FLASH PERFORMANCE FEATURES
s User Configurable as 1Mx8 or 512Kx16
s Access Times of 100, 120, 150ns
32
25
Discrete Approach
S
A
V
I
N
G
S
Area
5 x 265mm + 54mm = 1379mm 2
2
800mm2
42%
5 x 54 pins + 48 balls = 318 connections
275 balls
14%
ACTUAL SIZE
22.3
11.9
I/O
Count
11.9
48
PBGA
6.0
9.0
Note: Dimensions in millimeters
s 3.3 Volt for Read and Write Operations
s 1,000,000 Erase/Program Cycles
s Sector Architecture
One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes
in byte mode
One 8K word, two 4K words, one 16K word, and fifteen 32K
word sectors in word mode.
Any combination of sectors can be concurrently erased. Also
supports full chip erase
s Boot Code Sector Architecture (Bottom)
s Embedded Erase and Program Algorithms
s Erase Suspend/Resume
Supports reading data from or programing data to a sector
not being erased
BENEFITS
s 42% SPACE SAVINGS
s Reduced part count
s Reduced I/O count
14% I/O Reduction
s Suitable for hi-reliability applications
s SDRAM Upgradeable to 16M x 72 density (contact factory for
information)
s Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32) density
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| WE128K32-140G1UIA | 128K X 32 EEPROM 5V MODULE, 140 ns, CQFP68 |
| WE128K32-150G1UM | 128K X 32 EEPROM 5V MODULE, 150 ns, CQFP68 |
| WE128K32-200G1UMA | 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
| WS128K32N-85HME | 512K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CPGA66 |
| WSF512K16-72H2I | SPECIALTY MEMORY CIRCUIT, CPGA66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WEDPNF8M721V-1012BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1012BM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1015BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1015BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1015BM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
发布紧急采购，3分钟左右您将得到回复。