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参数资料
| 型号： | WF1M32B-100G2TM3 |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM MODULE, 100 ns, CQFP68 |
| 封装： | CERAMIC, QFP-68 |
| 文件页数： | 7/13页 |
| 文件大小： | 159K |
| 代理商： | WF1M32B-100G2TM3 |
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF1M32B-XXX3
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-0.5 to +4.0
V
Signal Voltage Range
-0.5 to Vcc +0.5
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Endurance (write/erase cycles)
1,000,000 min.
cycles
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
0.7 x Vcc
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 3.6, VIN = GND or VCC
10
A
Output Leakage Current
ILOx32
VCC = 3.6, VIN = GND or VCC
10
A
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH, f = 5MHz
120
mA
VCC Active Current for Program or Erase (2)
ICC2
CS = VIL, OE = VIH
140
mA
VCC Standby Current
ICC3
VCC = 3.6, CS = VIH, f = 5MHz
200
A
Output Low Voltage
VOL
IOL = 5.8 mA, VCC = 3.0
0.45
V
Output High Voltage
VOH1
IOH = -2.0 mA, VCC = 3.0
0.85 X VCC
V
Low VCC Lock-Out Voltage (4)
VLKO
2.3
2.5
V
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 3.3V, VSS = 0V, TA = -55
°C to +125°C)
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 8 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
4. Guaranteed by design, but not tested.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data
150
°C
10
Years
Retention Time
125
°C
20
Years
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