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参数资料
| 型号： | WF1M32B-100HI3 |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM MODULE, 100 ns, CHIP66 |
| 封装： | PGA TYPE, CERAMIC, HIP-66 |
| 文件页数： | 1/13页 |
| 文件大小： | 159K |
| 代理商： | WF1M32B-100HI3 |
1
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
WF1M32B-XXX3
1Mx32 3.3V FLASH MODULE
FEATURES
s Access Times of 100, 120, 150ns
s Packaging
66 pin, PGA Type, 1.185" square, Hermetic Ceramic
HIP (Package 401)
68 lead, Low Profile CQFP (G2T), 4.6mm (0.180")
square (Package 509)
s 1,000,000 Erase/Program Cycles
s Sector Architecture
One 16KByte, two 8KBytes, one 32KByte, and fifteen
64kBytes in byte mode
Any combination of sectors can be concurrently erased.
Also supports full chip erase
s Organized as 1Mx32
s Commercial, Industrial and Military Temperature Ranges
s 3.3 Volt for Read and Write Operations
s Boot Code Sector Architecture (Bottom)
s Low Power CMOS, 1.0mA Standby
s Embedded Erase and Program Algorithms
s Built-in Decoupling Caps for Low Noise Operation
s Erase Suspend/Resume
Supports reading data from or programing data to a
sector not being erased
s Low Current Consumption
Typical values at 5MHz:
40mA Active Read Current
80mA Program/Erase Current
s Weight
WF1M32B-XG2TX3 -8 grams typical
WF1M32B-XHX3 -13 grams typical
Note: For programming information refer to Flash Programming 8M3
Application Note.
May 1999 Rev. 4
I/O8
I/O9
I/O10
A14
A16
A11
A0
A18
I/O0
I/O1
I/O2
RESET
CS2
GND
I/O11
A10
A9
A15
VCC
CS1
A19
I/O3
I/O15
I/O14
I/O13
I/O12
OE
A17
WE
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A7
A12
NC
A13
A8
I/O16
I/O17
I/O18
VCC
CS4
NC
I/O27
A4
A5
A6
NC
CS3
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A1
A2
A3
I/O23
I/O22
I/O21
I/O20
11
22
33
44
55
66
1
12
23
34
45
56
PIN CONFIGURATION FOR WF1M32B-XHX3
PIN DESCRIPTION
TOP VIEW
I/O0-31
Data Inputs/Outputs
A0-19
Address Inputs
WE
Write Enable
CS1-4
Chip Selects
OE
Output Enable
RESET
Reset
VCC
Power Supply
GND
Ground
NC
Not Connected
BLOCK DIAGRAM
1M x 8
8
I/O 0-7
CS1
1M x 8
8
I/O 8-15
CS2
1M x 8
8
I/O 16-23
CS3
1M x 8
8
I/O 24-31
CS4
A 0 - 19
OE
WE
RESET
相关PDF资料 |
PDF描述 |
|---|---|
| WF1M32B-100G2TI3A | 1M X 32 FLASH 3.3V PROM MODULE, 100 ns, CQFP68 |
| WS512K32N-20H1I | 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CHIP66 |
| WS512K32-17G2TM | 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 |
| WS512K32-35G2TMA | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS512K32-35G2TM | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WF1M32B-100HI3A | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1Mx32 3.3V Flash Module |
| WF1M32B-100HI5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 Flash EEPROM Module |
| WF1M32B-100HI5A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 Flash EEPROM Module |
| WF1M32B-100HM3 | 制造商:Microsemi Corporation 功能描述:1M X 32 FLASH MODULE, 3.3V, 100NS, BOOT BLOCK, 66 PGA 1.185" - Bulk |
| WF1M32B-100HM3A | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1Mx32 3.3V Flash Module |
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