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参数资料
| 型号： | WF2M32-90G2UM5 |
| 元件分类： | PROM |
| 英文描述： | 2M X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68 |
| 封装： | 22.40 MM, CERAMIC, QFP-68 |
| 文件页数： | 10/14页 |
| 文件大小： | 174K |
| 代理商： | WF2M32-90G2UM5 |
5
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF2M32-XXX5
CS
WE
RY/BY
RESET
tRP
The rising edge of the last WE signal
Entire programming
or erase operations
tReady
tBUSY
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
FIG. 3
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Write Enable Setup Time
tWLEL
tWS
000
ns
Chip Select Pulse Width
tELEH
tCP
45
50
ns
Address Setup Time
tAVEL
tAS
000
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
000
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
ns
Duration of Byte Programming Operation (1)
tWHWH1
300
s
Sector Erase Time (2)
tWHWH2
15
sec
Read Recovery Time
tGHEL
000
s
Chip Programming Time
44
sec
Chip Erase Time (3)
256
sec
Output Enable Hold Time (4)
tOEH
10
ns
NOTES:
1. Typical value for tWHWH1 is 7
s.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIG. 4
RESET TIMING DIAGRAM
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