参数资料
型号: WF8M32-120G4DI5
元件分类: PROM
英文描述: 8M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
封装: 40 MM, DUAL CAVITY, CERAMIC, QFP-68
文件页数: 3/10页
文件大小: 122K
代理商: WF8M32-120G4DI5
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
Parameter
Symbol
Conditions
Max Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
20
pF
WE capacitance
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
60
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
20
pF
RESET capacitance
CRST
VIN = O V, f = 1.0 MHz
20
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Voltage on Any Pin Relative to VSS
VT
-2.0 to +7.0
V
Power Dissipation
PT
8W
Storage Temperature
Tstg
-65 to +125
°C
Short Circuit Output Current
IOS
100
mA
Endurance - Write/Erase Cycles
100,000 min
cycles
(Mil Temp)
Data Retention (Mil Temp)
20
years
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
00
0
V
Input High Voltage
VIH
2.0
-
VCC + 0.5
V
Input Low Voltage
VIL
-0.5
-
+0.8
V
Operating Temperature (Mil.)
TA
-55
-
+125
°C
Operating Temperature (Ind.)
TA
-40
-
+85
°C
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than
2mA/MHz, with OE at VIH.
2. Icc active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions VIL = 0.3V, VIH = VCC - 0.3V
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILOx32
VCC = 5.5, VIN = GND to VCC
10
A
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH, f = 5MHz
640
mA
VCC Active Current for Program or Erase (2)
ICC2
CS = VIL, OE = VIH
960
mA
VCC Standby Current
ICC3
VCC = 5.5, CS = VIH, f = 5MHz, RESET = Vcc
± 0.3V
160
mA
Output Low Voltage
VOL
IOL = 12.0 mA, VCC = 4.5
0.45
V
Output High Voltage
VOH
IOH = -2.5 mA, VCC = 4.5
0.85 x
V
Vcc
Low VCC Lock-Out Voltage
VLKO
3.2
4.2
V
CAPACITANCE
(TA = +25
°C)
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