参数资料
型号: WME128K8-120DEQA
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: PROM
英文描述: 128K X 8 EEPROM 5V, 120 ns, CDSO32
封装: 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
文件页数: 6/11页
文件大小: 378K
代理商: WME128K8-120DEQA
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WME128K8-XXX
January 2004
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
WRITE CYCLE TIMING
Figures 4 and 5 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing
the CS# line low. Write enable consists of setting the WE#
line low. The write cycle begins when the last of either CS#
or WE# goes low.
The WE# line transition from high to low also initiates
an internal 150sec delay timer to permit page mode
operation. Each subsequent WE# transition from high to
low that occurs before the completion of the 150sec time
out will restart the timer from zero. The operation of the
timer is the same as a retriggerable one-shot.
WRITE
Write operations are initiated when both CS# and WE#
are low and OE# is high. The EEPROM devices support
both a CS# and WE# controlled write cycle. The address is
latched by the falling edge of either CS# or WE#, whichever
occurs last.
The data is latched internally by the rising edge of either
CS# or WE#, whichever occurs rst. A byte write operation
will automatically continue to completion.
AC WRITE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
128Kx8
Unit
Min
Max
Write Cycle Time, TYP = 6ms
tWC
10
ms
Address Set-up Time
tAS
10
ns
Write Pulse Width (WE# or CS#)
tWP
100
ns
Chip Select Set-up Time
tCS
0ns
Address Hold Time
tAH
100
ns
Data Hold Time
tDH
10
ns
Chip Select Hold Time
tCH
0ns
Data Set-up Time
tDS
50
ns
Output Enable Set-up Time
tOES
0ns
Output Enable Hold Time
tOEH
0ns
Write Pulse Width High
tWPH
50
ns
相关PDF资料
PDF描述
WME128K8-200CQE 128K X 8 EEPROM 5V, 200 ns, CDIP32
WME128K8-200DEME 128K X 8 EEPROM 5V, 200 ns, CDSO32
WS512K8-85CIEA 512K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CDMA32
WMS128K8-70FEC 128K X 8 STANDARD SRAM, 70 ns, CDFP32
W3DG727V7D2 8M X 72 SYNCHRONOUS DRAM MODULE, DMA168
相关代理商/技术参数
参数描述
WME128K8-140CC 制造商:Microsemi Corporation 功能描述:128K X 8 EEPROM MONOLITHIC, 140NS, 32 DIP, COMMERCIAL SCREEN - Bulk
WME128K8-140CCA 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796
WME128K8-140CI 制造商:Microsemi Corporation 功能描述:128K X 8 EEPROM MONOLITHIC, 140NS, 32 DIP, INDUSTRIAL SCREEN - Bulk
WME128K8-140CIA 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796
WME128K8-140CM 制造商:Microsemi Corporation 功能描述:128K X 8 EEPROM MONOLITHIC, 140NS, 32 DIP, MIL-SCREENED - Bulk