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参数资料
| 型号： | WMS128K8V-35 |
| 英文描述： | 128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时间35ns）) |
| 中文描述： | 128Kx8 3.3单片的SRAM（128Kx8，3.3伏，单片静态随机存储器（存取时间为35ns）） |
| 文件页数： | 2/8页 |
| 文件大小： | 107K |
| 代理商： | WMS128K8V-35 |
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMS128K8V-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
5.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
20
pF
Output capacitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
20
pF
This parameter is guaranteed by design but not tested.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from-2V to +7V.
I
OL
& I
OH
programmable from0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the mdpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
120
8
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 3.3, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, V
CC
= 3.3
CS = V
IH
, OE = V
IH
, f = 5MHz, V
CC
= 3.3
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
2.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS128K8V-35CC | 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, 3.3V, 35NS, 32 DIP, COMMERCIAL SCR - Bulk |
| WMS128K8V-35CI | 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, 3.3V, 35NS, 32 DIP, INDUSTRIAL SCR - Bulk |
| WMS128K8V-35CM | 制造商:Microsemi Corporation 功能描述:128K X 8 SRAM MONOLITHIC, 3.3V, 35NS, 32 DIP, MIL-SCREENED - Bulk |
| WMS128K8-XCLX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
| WMS128K8-XCX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM |
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