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参数资料
| 型号： | WMS512K8-100 |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间100ns）) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8单片静态随机存储器（存取时间100ns的）） |
| 文件页数： | 2/6页 |
| 文件大小： | 70K |
| 代理商： | WMS512K8-100 |
2
White Microelectronics Phoenix, AZ (602) 437-1520
2
S
WMS512K8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
7.0
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
TA
Min
4.5
2.2
-0.3
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 2.1mA, V
CC
= 4.5
I
OH
= -1.0mA, V
CC
= 4.5
10
10
50
1
0.4
μ
A
μ
A
mA
mA
V
V
2.4
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
12
pF
Output capacitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
12
pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(T
A
= +25
°
C)
Parameter
Symbol
Conditions
Military
Typ
Units
Min
2.0
Max
5.5
Data Retention Supply Voltage
V
DR
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
Data Retention Current
I
CCDR1
100
400
μ
A
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
Commercial
(T
A
= 0
°
C to +70
°
C)
Min
Typ
2.0
Industrial
(T
A
= -40
°
C to +85
°
C)
Min
Typ
2.0
Units
Max
5.5
Max
5.5
Data Retention Supply Voltage
V
DR
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
μ
A
Low Power Data Retention (L)
I
CCDR1
1
50
1
75
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8-100CC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, COMMERCIAL SCRE - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, COMMERCIAL SCRE - Bulk |
| WMS512K8-100CI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, INDUSTRIAL SCRE - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, INDUSTRIAL SCRE - Bulk |
| WMS512K8-100CM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, MIL-SCREENED - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 DIP, MIL-SCREENED - Bulk |
| WMS512K8-100CQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| WMS512K8-100DEC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 100NS, 32 CSOJ EVOL., COMMERCI - Bulk |
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