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参数资料
| 型号： | WMS512K8-17 |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间17ns）) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8单片静态随机存储器（存取时间17ns）） |
| 文件页数： | 2/10页 |
| 文件大小： | 114K |
| 代理商： | WMS512K8-17 |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS512K8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Conditions
Parameter
Sym
Units
Min
Max
10
10
160
15
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current*
Standby Current
Output Low Voltage
I
LI
I
LO
I
CC
I
SB
V
OL
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA for 17 - 35ns,
I
OL
= 2.1mA for 45 - 55ns, V
CC
= 4.5
I
OH
= -4.0mA for 17 - 35ns,
I
OH
= -1.0mA for 45 - 55ns, V
CC
= 4.5
μ
A
μ
A
mA
mA
V
Output High Voltage
V
OH
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
* Not 100% duty cycle
CAPACITANCE
(T
A
= +25
°
C)
Parameter
Symbol
Condition
Package
Speed (ns)
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
Flat Pack Evolutionary
32 Pin CLCC
36 Pin CSOJ & Flat Pack
Revolutionary
15 to 55
20
pF
15 to 55
15 to 35
45 to 55
15 to 55
15
12
20
20
pF
pF
pF
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
Flat Pack Evolutionary
36 Pin CSOJ & Flat Pack
Revolutionary
15 to 35
45 to 55
12
20
pF
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
2.0
Max
5.5
7
2
Data Retention Supply Voltage
Low Power Data Retention
Low Power Data Retention
V
DR
I
CCDR1
I
CCDR2
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
CC
= 2V
V
mA
mA
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8-17CC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 17NS, 32 DIP, COMMERCIAL SCREE - Bulk |
| WMS512K8-17CCA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8-17CI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 17NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
| WMS512K8-17CIA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8-17CLC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
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