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参数资料
| 型号： | WMS512K8-25FMA |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, CDFP36 |
| 封装： | CERAMIC,DFP-36 |
| 文件页数： | 3/10页 |
| 文件大小： | 279K |
| 代理商： | WMS512K8-25FMA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS512K8-XXX
September 2007
Rev. 11
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND TO VCC
10
μA
Operating Supply Current*
ICC
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5,
160
mA
Standby Current
ISS
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
0.45
mA
Output Low Voltage
VOL
IOL = 6mA for 17 - 35ns,
IOL = 2.1mA for 45 - 55ns, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA for 17 - 35ns,
IOH = 1.0mA for 45 - 55ns, VCC = 4.5
2.4
V
DC Characteristics - CMOS Compatible
(VCC = 5.0V, GND = 0V, -55°C TA 125°C)
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil)
TA
-55
+125
°C
Capacitance
(TA = +25°C)
Parameter
Symbol
Conditions
Package
Speed (ns)
Max
Unit
Input capacitance
CIN
VIN = 0 V, f = 1.0 MHz
32 pin CSOJ, DIP, Flat Pack Evolutionary
15 to 55
20
pF
32 pin CLCC
15 to 55
15
pF
36 pin CSOJ & Flat Pack Revolutionary
15 to 35
12
pF
45 to 55
20
pF
Output
capacitance
COUT
VOUT = 0 V, f = 1.0 MHz
32 pin CSOJ, DIP, Flat Pack Revolutionary
15 to 55
20
pF
36 pin CSOJ & Flat Pack Revolutionary
15 to 35
12
pF
45 to 55
20
pF
This parameter is guaranteed by design but not tested.
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature Range
TSTG
-65
+150
°C
Signal Voltage Range to GND
VG
-0.5
VCC-0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage Range (VCC)VCC
-0.5
7.0
V
Truth Table
CS#
OE#
WE#
MODE
DATA I/O
POWER
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Acvive
Parameter
Symbol
Conditions
Min
Max
Unit
Data Retention Supply Voltage
VDR
CS#3 VCC -0.2V
2.0
5.5
V
Low Power Data Retention
ICCDR1
VCC = 3V
7
mA
Low Power Data Retention
ICCDR2
VCC = 2V
2
mA
Data retention characteristics for low power “l” version
相关PDF资料 |
PDF描述 |
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| WMS512K8-35CIA | 512K X 8 STANDARD SRAM, 35 ns, CDIP32 |
| WMS512K8-45FFIA | 512K X 8 STANDARD SRAM, 45 ns, DFP32 |
| WMS512K8L-17CLI | 512K X 8 STANDARD SRAM, 17 ns, CQCC32 |
| WMS512K8L-17FIA | 512K X 8 STANDARD SRAM, 17 ns, CDFP36 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8-25FQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| WMS512K8-25FQA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM, SMD 5962-95613 |
| WMS512K8-35CC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 35NS, 32 DIP, COMMERCIAL SCREE - Bulk |
| WMS512K8-35CCA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8-35CI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 35NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
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