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参数资料
| 型号： | WMS512K8-45 |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间45ns）) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8单片静态随机存储器（存取时间45ns）） |
| 文件页数： | 3/10页 |
| 文件大小： | 114K |
| 代理商： | WMS512K8-45 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS512K8-XXX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-15
-17
-20
-25
-35
-45
-55
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
15
17
20
25
35
45
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
17
20
25
35
45
55
0
0
0
0
0
0
0
15
8
17
9
20
10
25
12
35
25
45
25
55
25
2
0
2
0
2
0
2
0
4
0
4
0
4
0
8
8
9
9
10
10
12
12
15
15
20
20
20
20
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1. This parameter is guaranteed by design but not tested.
Symbol
-15
-17
-20
-25
-35
-45
-55
Units
Min
15
13
13
8
13
2
0
2
Max
Min
17
14
14
9
14
2
0
2
Max
Min
20
14
14
10
14
2
0
3
Max
Min
25
15
15
10
15
2
0
4
Max
Min
35
25
25
20
25
2
0
4
Max
Min
45
35
35
25
35
2
5
5
Max
Min
55
50
50
25
40
2
5
5
Max
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
9
9
10
15
20
25
0
0
0
0
0
0
0
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
相关PDF资料 |
PDF描述 |
|---|---|
| WMS512K8-55 | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间55ns）) |
| WMS512K8-70 | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间70ns）) |
| WMS512K8-100 | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间100ns）) |
| WMS512K8-120 | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间120ns）) |
| WMS512K8-85 | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（存取时间85ns）) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8-45CC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 45NS, 32 DIP, COMMERCIAL SCREE - Bulk |
| WMS512K8-45CCA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8-45CI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 45NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
| WMS512K8-45CIA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8-45CLC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512Kx8 MONOLITHIC SRAM |
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