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参数资料
| 型号： | WMS512K8BV-15E |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间15ns）) |
| 中文描述： | 512Kx8单片的SRAM（512Kx8单片静态随机存储器（BiCMOS工艺，存取时间15ns的）） |
| 文件页数： | 3/8页 |
| 文件大小： | 109K |
| 代理商： | WMS512K8BV-15E |
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMS512K8BV-XXXE
AC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-15
-17
-20
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
15
17
20
ns
Address Access Time
t
AA
15
17
20
ns
Output Hold from Address Change
t
OH
0
0
0
ns
Chip Select Access Time
t
ACS
15
17
20
ns
Output Enable to Output Valid
t
OE
7
8
10
ns
Chip Select to Output in Low Z
t
CLZ
1
2
2
2
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
7
8
10
ns
Output Disable to Output in High Z
t
OHZ
1
7
8
10
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-15
-17
-20
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
15
17
20
ns
Chip Select to End of Write
t
CW
10
12
14
ns
Address Valid to End of Write
t
AW
10
12
14
ns
Data Valid to End of Write
t
DW
8
9
10
ns
Write Pulse Width
t
WP
12
14
14
ns
Address Setup Time
t
AS
0
0
0
ns
Address Hold Time
t
AH
0
0
0
ns
Output Active from End of Write
t
OW
1
2
3
3
ns
Write Enable to Output in High Z
t
WHZ
1
8
8
9
ns
Data Hold Time
t
DH
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from-2V to +7V.
I
OL
& I
OH
programmable from0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the mdpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
相关PDF资料 |
PDF描述 |
|---|---|
| WMS512K8BV-17E | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns）) |
| WMS512K8BV-20E | 512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns）) |
| WMS512K8LV-85DEIEA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-85DEME | 512Kx8 MONOLITHIC SRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8BV-15FCE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX8|BICMOS-TTL|FP|36PIN|CERAMIC |
| WMS512K8BV-15FCEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8BV-15FECE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC |
| WMS512K8BV-15FECEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8BV-15FEIE | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC |
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