参数资料
型号: WMS512K8BV-20DEIEA
元件分类: SRAM
英文描述: 512K X 8 STANDARD SRAM, 20 ns, CDSO32
封装: CERAMIC, SOJ-32
文件页数: 2/8页
文件大小: 109K
代理商: WMS512K8BV-20DEIEA
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMS512K8BV-XXXE
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max
Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
12
pF
Output capacitance
COUT
VOUT = 0V, f = 1.0MHz
12
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
CAPACITANCE
(TA = +25
°C)
DC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
120
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
15
mA
Output Low Voltage
VOL
IOL = 8mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
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