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参数资料
| 型号： | WMS512K8L-100DECE |
| 元件分类： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 100 ns, CDSO32 |
| 封装： | CERAMIC, SOJ-32 |
| 文件页数： | 2/6页 |
| 文件大小： | 70K |
| 代理商： | WMS512K8L-100DECE |
2
White Microelectronics Phoenix, AZ (602) 437-1520
2
SRAM
MONOLITHICS
WMS512K8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
RECOMMENDED OPERATING CONDITIONS
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
50
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
1
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Parameter
Symbol
Condition
Max Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
12
pF
Output capacitance
COUT
VOUT = 0V, f = 1.0MHz
12
pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Military
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
100
400
A
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Commercial
Industrial
Units
(TA = 0
°C to +70°C)
(TA = -40
°C to +85°C)
Min
Typ
Max
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
2.0
5.5
V
Low Power Data Retention (L)
ICCDR1
VCC = 3V
1
50
1
75
A
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
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