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参数资料
| 型号： | WMS512K8LV-100CME |
| 元件分类： | SRAM |
| 英文描述： | 512Kx8 MONOLITHIC SRAM |
| 中文描述： | 512Kx8整装静态存储器 |
| 文件页数： | 2/6页 |
| 文件大小： | 275K |
| 代理商： | WMS512K8LV-100CME |
WMS512K8V-XCX
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
February, 2000
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
ADVANCED*
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
-0.5
TRUTH TABLE
WE#
Mode
X
Standby
H
Read
L
Write
H
Out Disable
CS#
H
L
L
L
OE#
X
L
X
H
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°C
V
CC
+ 0.3
+0.8
+125
DC CHARACTERISTICS
V
CC
= 3.3V, GND = 0V, -55°C ≤ T
A
≤ +125°C
Conditions
V
CC
= 3.6, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
I
OL
= 2.1mA, V
CC
= 3.0
I
OH
= -1.0mA, V
CC
= 3.0
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Symbol
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Min
Max
10
10
25
400
0.4
Units
μA
μA
mA
μA
V
V
2.4
CAPACITANCE
T
A
= +25°C
Symbol Condition
C
IN
V
IN
= 0V, f = 1.0MHz
C
OUT
V
OUT
= 0V, f = 1.0MHz
Parameter
Input capacitance
Output capacitance
This parameter is guaranteed by design but not tested.
Max
12
12
Unit
pF
pF
相关PDF资料 |
PDF描述 |
|---|---|
| WMS512K8LV-100CMEA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DECE | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DECEA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DEIE | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DEIEA | 512Kx8 MONOLITHIC SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8LV-100CMEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DECE | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DECEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DEIE | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-100DEIEA | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM |
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