参数资料
型号: WMS512K8V-100
英文描述: 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(存取时间100ns))
中文描述: 512Kx8单片的SRAM(512Kx8单片静态随机存储器(存取时间100ns的))
文件页数: 2/6页
文件大小: 68K
代理商: WMS512K8V-100
2
White Microelectronics Phoenix, AZ (602) 437-1520
2
S
WMS512K8V-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
7.0
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
DC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
TA
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 3.6, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 3.6
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 3.6
I
OL
= 2.1mA, V
CC
= 3.0
I
OH
= -1.0mA, V
CC
= 3.0
10
10
25
400
0.4
μ
A
μ
A
mA
μ
A
V
V
2.4
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
12
pF
Output capacitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
12
pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(T
A
= +25
°
C)
相关PDF资料
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