参数资料
型号: WMS512K8V-15
英文描述: 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(存取时间15ns))
中文描述: 512Kx8单片的SRAM(512Kx8单片静态随机存储器(存取时间15ns的))
文件页数: 2/9页
文件大小: 187K
代理商: WMS512K8V-15
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS512K8V-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-40
-65
-0.5
Max
+85
+150
4.6
150
4.6
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Input capacitance
Output capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max
12
12
Unit
pF
pF
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-40
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+85
CAPACITANCE
(T
A
= +25
°
C)
DC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -40
°
C to +85
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
80
50
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 3.6, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 3.6
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 3.6
I
OL
= 4.0mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
2.4
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