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参数资料
| 型号： | WMS512K8V-20FC |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | SRAM |
| 英文描述： | 512Kx8 MONOLITHIC SRAM |
| 中文描述： | 512Kx8整装静态存储器 |
| 文件页数： | 3/9页 |
| 文件大小： | 103K |
| 代理商： | WMS512K8V-20FC |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS512K8V-XXX
AC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-15
-17
-20
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
15
17
20
ns
Address Access Time
tAA
15
17
20
ns
Output Hold from Address Change
tOH
000
ns
Chip Select Access Time
tACS
15
17
20
ns
Output Enable to Output Valid
tOE
88
10
ns
Chip Select to Output in Low Z
tCLZ1
111
ns
Output Enable to Output in Low Z
tOLZ1
000
ns
Chip Disable to Output in High Z
tCHZ1
88
10
ns
Output Disable to Output in High Z
tOHZ1
88
10
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-15
-17
-20
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
15
17
20
ns
Chip Select to End of Write
tCW
12
14
ns
Address Valid to End of Write
tAW
12
14
ns
Data Valid to End of Write
tDW
9910
ns
Write Pulse Width
tWP
12
14
ns
Address Setup Time
tAS
00
0
ns
Address Hold Time
tAH
00
0
ns
Output Active from End of Write
tOW1
23
3
ns
Write Enable to Output in High Z
tWHZ1
88
9
ns
Data Hold Time
tDH
00
0
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
相关PDF资料 |
PDF描述 |
|---|---|
| WMS512K8V-20FEC | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20FEI | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20FEM | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20FEMA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20FI | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 240pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Sn60 Coated; Body Dimensions: 0.125" x 0.062" x 0.051"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WMS512K8V-20FEC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 FLATPACK EVOL., COM - Bulk |
| WMS512K8V-20FEI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 FLATPACK EVOL., IND - Bulk |
| WMS512K8V-20FEM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 FLATPACK EVOL., MIL - Bulk |
| WMS512K8V-20FI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 36 FLATPACK REV., INDU - Bulk |
| WMS512K8V-20FM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 36 FLATPACK REV., MIL- - Bulk |
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