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参数资料
| 型号： | WS128K32-20G4TQA |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 |
| 封装： | 40 MM, 3.56 MM HEIGHT, CERAMIC, QFP-68 |
| 文件页数： | 5/11页 |
| 文件大小： | 375K |
| 代理商： | WS128K32-20G4TQA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32-XXX
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0V, f = 1.0 MHz
pF
HIP (PGA) H1
20
CQFP G4T
50
CQFP G2U/G2L
20
CQFP G1U/G1T
20
CS1-4 capacitance
CCS
VIN = 0V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter
Sym
Conditions
-15
-17
-20
-25
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
600
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
80
60
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
Parameter
Sym
Conditions
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
600
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
60
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Data Retention Voltage
VCC
VCC = 2.0V
2
-
V
Data Retention Quiescent Current
ICCDR
CS
≥ VCC -0.2V
-
1
2
mA
Chip Disable to Data Retention Time (1)
TCDR
VIN
≥ VCC -0.2V
0
-
ns
Operation Recovery Time (1)
TR
or VIN - 0.2V
TRC
-ns
NOTE: Parameter guaranteed, but not tested.
DATA RETENTION CHARACTERISTICS (FOR WS128K32L-XXX ONLY)
(TA = -55°C TO +125°C), (TA = -40°C TO +85°C)
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