参数资料
型号: WS128K32N-25H1QA
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: SRAM
英文描述: 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66
封装: 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
文件页数: 4/9页
文件大小: 546K
代理商: WS128K32N-25H1QA
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32-XXX
May 2006
Rev. 17
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
FIGURE. 4 – AC TEST CIRCUIT
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 .
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Parameter
Write Cycle
Symbol
-15
-17
-20
-25
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
15
17
20
25
35
45
55
ns
Chip Select to End of Write
tCW
14
15
20
25
30
45
ns
Address Valid to End of Write
tAW
14
15
20
25
30
45
ns
Data Valid to End of Write
tDW
10
12
15
20
25
ns
Write Pulse Width
tWP
14
15
20
25
30
45
ns
Address Setup Time
tAS
0000000
ns
Address Hold Time
tAH
0000000
ns
Output Active from End of Write
tOW1
3333444
ns
Write Enable to Output in High Z
tWHZ1
10
12
15
20
25
ns
Data Hold Time
tDH
0000000
ns
Parameter
Read Cycle
Symbol
-15
-17
-20
-25
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
15
17
20
25
35
45
55
ns
Address Access Time
tAA
15
17
20
25
35
45
55
ns
Output Hold from Address Change
tOH
0000000
ns
Chip Select Access Time
tACS
15
17
20
25
35
45
55
ns
Output Enable to Output Valid
tOE
10
12
15
20
25
30
ns
Chip Select to Output in Low Z
tCLZ1
3333333
ns
Output Enable to Output in Low Z
tOLZ1
0000000
ns
Chip Disable to Output in High Z
tCHZ1
12
15
20
ns
Output Disable to Output in High Z
tOHZ1
12
15
20
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
相关PDF资料
PDF描述
WMF2M8-90LC5 2M X 8 FLASH 5V PROM, 90 ns, CQCC44
WE128K16-250CC 128K X 16 EEPROM 5V MODULE, 250 ns, CDMA40
WE128K16-300CI 128K X 16 EEPROM 5V MODULE, 300 ns, CDMA40
WPS512K8LB-25RJM 512K X 8 STANDARD SRAM, 25 ns, PDSO36
WMS128K8V-15FRMA 128K X 8 STANDARD SRAM, 15 ns, CDFP32
相关代理商/技术参数
参数描述
WS128K32N-25HI 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module
WS128K32N-25HM 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module
WS128K32N-25HQ 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module
WS128K32N-35G2TCE 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT
WS128K32N-35G2TCEA 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT