参数资料
型号: WS128K32V-20G2UM
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: SRAM
英文描述: 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
封装: 22.40 X 22.40 MM, CERAMIC, QFP-68
文件页数: 1/8页
文件大小: 462K
代理商: WS128K32V-20G2UM
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
March 2006
Rev. 8
128Kx32 3.3V SRAM MODULE
3.3 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WS128K32V-XG2UX - 8 grams typical
WS128K32NV-XH1X - 13 grams typical
* This product is subject to change without notice.
** Commercial and Industrial only.
FEATURES
Access Times of 15**, 17, 20, 25, 35ns
MIL-STD-883 Compliant Devices Available
Low Voltage Operation
Packaging
66-pin, PGA Type, 1.075 inch square Hermetic
Ceramic HIP (Package 400)
68 lead, Hermetic CQFP (G2U), 22.4mm (0.880
inch) square (Package 510), 3.56mm (0.140 inch)
high.
Organized as 128Kx32; User Congurable as
256Kx16 or 512Kx8
Commercial, Industrial and Military Temperature
Ranges
FIGURE 1 – PIN CONFIGURATION FOR WS128K32NV-XH1X
Pin Description
Top View
Block Diagram
WE1#CS1#CS2#CS3#CS4#
WE4#
WE3#
WE2#
128K x 8
OE#
A0-16
I/O0-7
I/O24-31
I/O16-23
I/O8-15
88
8
I/O0-31
Data Inputs/Outputs
A0-16
Address Inputs
WE1-4#
Write Enables
CS1-4#
Chip Selects
OE#
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
I/O8
I/O9
I/O10
A13
A14
A15
A16
NC
I/O0
I/O1
I/O2
WE2#
CS2#
GND
I/O11
A10
A11
A12
VCC
CS1#
NC
I/O3
I/O15
I/O14
I/O13
I/O12
OE#
NC
WE1#
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A6
A7
NC
A8
A9
I/O16
I/O17
I/O18
VCC
CS4#
WE4#
I/O27
A3
A4
A5
WE3#
CS3#
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A0
A1
A2
I/O23
I/O22
I/O21
I/O20
11
22
33
44
55
66
1
12
23
34
45
56
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