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参数资料
| 型号： | WS128K32V-25G1UMA |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | SRAM |
| 英文描述： | 128Kx32 3.3V SRAM MULTICHIP PACKAGE |
| 中文描述： | 128Kx32 3.3V的SRAM的多芯片封装 |
| 文件页数： | 3/8页 |
| 文件大小： | 98K |
| 代理商： | WS128K32V-25G1UMA |
White Microelectronics (602) 437-1520 www.whiteedc.com
4
S
3
WS128K32V-XXX
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G2T/G1U
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
pF
20
20
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
5.5
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
Unit
V
V
V
V
CC
+ 0.3
+0.8
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
500
32
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz
CS = V
IH
, OE = V
IH
, f = 5MHz
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
I
CC
x 32
I
SB
V
OL
V
OH
2.4
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