参数资料
型号: WS128K48V-35G4WX
英文描述: 128Kx48 3.3V SRAM Module(128Kx48,3.3V,静态RAM模块(存取时间35ns))
中文描述: 128Kx48 3.3静态存储器模块(128Kx48,3.3伏,静态内存模块(存取时间为35ns))
文件页数: 2/5页
文件大小: 151K
代理商: WS128K48V-35G4WX
2
White Microelectronics Phoenix, AZ (602) 437-1520
WS128K48V-XG4WX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, T
A
= -55
°
C to +125
°
C)
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Parameter
Sym
Conditions
Units
Min
Max
10
10
750
48
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 3.6
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 3.6
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
2.4
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE capacitance
CS capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
100
20
20
20
100
Unit
pF
pF
pF
pF
pF
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