参数资料
型号: WS128K64V-20G4WX
英文描述: 128Kx64 3.3V SRAM Module(128Kx64,3.3V,静态RAM模块(存取时间20ns))
中文描述: 128Kx64 3.3静态存储器模块(128Kx64,3.3伏,静态内存模块(存取时间为20ns))
文件页数: 2/5页
文件大小: 152K
代理商: WS128K64V-20G4WX
2
White Microelectronics Phoenix, AZ (602) 437-1520
WS128K64V-XG4WX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, T
A
= -55
°
C to +125
°
C)
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Parameter
Sym
Conditions
Units
Min
Max
10
10
1
64
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 3.6
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 3.6
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
A
mA
V
V
2.4
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE capacitance
CS capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
100
20
20
20
100
Unit
pF
pF
pF
pF
pF
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