参数资料
型号: WS1M32-100G3CA
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: SRAM
英文描述: 1M X 32 MULTI DEVICE SRAM MODULE, 100 ns, CQFP84
封装: CERAMIC, QFP-84
文件页数: 3/6页
文件大小: 329K
代理商: WS1M32-100G3CA
WS1M32-XG3X
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
February, 2001
Rev. 5
PRELIMINARY
IOH
Current Source
D.U.T.
Ceff ≈ 50 pf
IOL
VZ ≈ 1.5V
(Bipolar Supply)
Current Source
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
70
85
100
120
ns
Address Access Time
tAA
70
85
100
120
ns
Output Hold from Address Change
tOH
5555
ns
Chip Select Access Time
tACS
70
85
100
120
ns
Output Enable to Output Valid
tOE
35
40
50
60
ns
Chip Select to Output in Low Z
tCLZ1
10
ns
Output Enable to Output in Low Z
tOLZ1
5555
ns
Chip Disable to Output in High Z
tCHZ1
25
35
ns
Output Disable to Output in High Z
tOHZ1
25
35
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
70
85
100
120
ns
Chip Select to End of Write
tCW
60
75
80
100
ns
Address Valid to End of Write
tAW
60
75
80
100
ns
Data Valid to End of Write
tDW
30
40
ns
Write Pulse Width
tWP
50
60
ns
Address Setup Time
tAS
0000
ns
Address Hold Time
tAH
5555
ns
Output Active from End of Write
tOW1
5555
ns
Write Enable to Output in High Z
tWHZ1
25
35
ns
Data Hold Time
tDH
0000
ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
相关PDF资料
PDF描述
WF512K32-120G2UQ5 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
WF512K32-150G2LC5A 512K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
WED3EG7218S202D3 16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
W3DG6318V75D2MG 16M X 64 SYNCHRONOUS DRAM MODULE, DMA168
WS128K32N-85HME 512K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CHIP66
相关代理商/技术参数
参数描述
WS1M32-17G3C 制造商:Microsemi Corporation 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., COMMERCIA - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., COMMERCIA - Bulk
WS1M32-17G3CA 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE
WS1M32-17G3I 制造商:Microsemi Corporation 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., INDUSTRIA - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., INDUSTRIA - Bulk
WS1M32-17G3IA 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE
WS1M32-17G3M 制造商:Microsemi Corporation 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., MIL-SCREE - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 SRAM MODULE, 5V, 17NS, 84 CQFP 1.285" SQ., MIL-SCREE - Bulk