- 您现在的位置：买卖IC网 > PDF目录361926 > WS1M32-25G3X 1Mx32 SRAM Module(1Mx32静态RAM模块（存取时间25ns）) PDF资料下载
参数资料
| 型号： | WS1M32-25G3X |
| 英文描述： | 1Mx32 SRAM Module(1Mx32静态RAM模块（存取时间25ns）) |
| 中文描述： | 1Mx32的SRAM模块（1Mx32静态内存模块（存取时间25ns的）） |
| 文件页数： | 2/6页 |
| 文件大小： | 150K |
| 代理商： | WS1M32-25G3X |
2
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
TRUTH TABLE
CS
1
H
L
L
L
H
H
H
L
CS
2
H
H
H
H
L
L
L
L
OE
X
L
H
X
L
H
X
X
WE
X
H
H
L
H
H
L
X
Mode
Standby
Read
Out Disable
Write
Read
Out Disable
Write
Invalid State Invalid State Invalid State
Data I/O
High Z
Data Out
High Z
Data In
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
Active
Active
Active
WS1M32-XG3X
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc + 0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Operating Temp (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.2
-0.5
-55
-40
Max
5.5
Unit
V
V
V
°
C
°
C
V
CC
+ 0.3
+0.8
+125
+85
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE
1-4
capacitance
WE
1-4
capacitance
CS
1-2
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
30
30
30
30
100
Unit
pF
pF
pF
pF
pF
Parameter
Symbol
Conditions
Units
Min
Max
10
10
600
120
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
V
CC
= 5.5, V
IN
= G
ND
to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA, Vcc = 4.5
I
OH
= -4.0mA, Vcc = 4.5
μ
A
μ
A
mA
mA
V
V
I
CC x 32
I
SB
V
OL
V
OH
2.4
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
相关PDF资料 |
PDF描述 |
|---|---|
| WS1M32-17G3X | 1Mx32 SRAM Module(1Mx32静态RAM模块（存取时间17ns）) |
| WS1M32-20G3X | 1Mx32 SRAM Module(1Mx32静态RAM模块（存取时间20ns）) |
| WS1M32-G3C | 1Mx32 SRAM MODULE |
| WS1M32-G3CA | 1Mx32 SRAM MODULE |
| WS1M32-G3I | 1Mx32 SRAM MODULE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WS1M32-25G4TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| WS1M32-25G4TM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| WS1M32-25HSC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE |
| WS1M32-25HSCA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE |
| WS1M32-25HSI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1Mx32 SRAM MODULE |
发布紧急采购，3分钟左右您将得到回复。