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参数资料
| 型号： | WS1M8V-70CM |
| 元件分类： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 70 ns, CDIP32 |
| 封装： | 0.600 INCH, CERAMIC, DIP-32 |
| 文件页数： | 2/5页 |
| 文件大小： | 138K |
| 代理商： | WS1M8V-70CM |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8V-XCX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
+4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
5.5
V
CS
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
Write
Data In
Active
NOTE: OE is internally tied to GND.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
28
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
28
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
CAPACITANCE
(TA = +25
°C)
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 3.6, VIN = GND to VCC
10
A
Output Leakage Current
ILO1
CS = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC1
CS = VIL, f = 5MHz, Vcc = 3.6
25
mA
Standby Current
ISB1
CS = VIH, f = 5MHz, Vcc = 3.6
800
A
Output Low Voltage
VOL
IOL = 2.1mA
0.4
V
Output High Voltage
VOH
IOH = -1.0mA
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V
1. OE is internally tied to GND.
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相关代理商/技术参数 |
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| WS1M8V-XCX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2X512KX8 Dualithic SRAM Advanced |
| WS1M8-XCX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2X512X8 Dualithic SRAM Preliminary |
| WS1M8-XDJX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM MCP |
| WS1M8-XFX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM MCP |
| WS1M8-XXX | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2 x 512K x 8 Dualithic SRAM |
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